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Sørensen et al., 2008 - Google Patents

Ambipolar transistor behavior in p-doped InAs nanowires grown by molecular beam epitaxy

Sørensen et al., 2008

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Document ID
17204029250252658535
Author
Sørensen B
Aagesen M
Sørensen C
Lindelof P
Martinez K
Nygård J
Publication year
Publication venue
Applied Physics Letters

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Snippet

We present the electric properties of p-In As nanowire field-effect transistors showing ambipolar conduction. Be doped nanowires are grown by the vapor-solid-solid mechanism using molecular beam epitaxy with in situ deposited Au catalyst particles. P-type conduction …
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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