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Yan, 2022 - Google Patents

Investigation of gallium nitride based on power semiconductor devices in polarization super junction technology

Yan, 2022

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Document ID
405819157003975550
Author
Yan H
Publication year

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Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the next generation of power devices. GaN transistors, switching losses are very low, thanks to the small parasitic capacitances and switching charges. Device scaling and monolithic …
Continue reading at etheses.whiterose.ac.uk (PDF) (other versions)

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