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Goethals et al., 2012 - Google Patents

Ultra-low-k cyclic carbon-bridged PMO films with a high chemical resistance

Goethals et al., 2012

Document ID
4355074883525385976
Author
Goethals F
Ciofi I
Madia O
Vanstreels K
Baklanov M
Detavernier C
Van Der Voort P
Van Driessche I
Publication year
Publication venue
Journal of Materials Chemistry

External Links

Snippet

Periodic mesoporous organosilicas (PMOs) are one of the most promising candidates to be used as ultra-low-k dielectrics in microelectronic devices. In this paper, PMO thin films that combine an ultra-low-k value, a hydrophobic property and a high resistance against …
Continue reading at pubs.rsc.org (other versions)

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    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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