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Mitard et al., 2016 - Google Patents

A 2nd Generation of 14/16nm-node compatible strained-Ge pFINFET with improved performance with respect to advanced Si-channel FinFETs

Mitard et al., 2016

Document ID
4452897367778051144
Author
Mitard J
Witters L
Sasaki Y
Arimura H
Schulze A
Loo R
Ragnarsson L
Hikavyy A
Cott D
Chiarella T
Kubicek S
Mertens H
Ritzenthaler R
Vrancken C
Favia P
Bender H
Horiguchi N
Barla K
Mocuta D
Mocuta A
Collaert N
Thean A
Publication year
Publication venue
2016 IEEE Symposium on VLSI Technology

External Links

Snippet

Sub-30nm LG Fin-replacement strained-Germanium pFinFETs at state-of-art device dimensions are reported with optimized S/D junctions and RMG stack. Competitive performance is shown for the first time when comparing the sGe devices with counterparts …
Continue reading at ieeexplore.ieee.org (other versions)

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