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Joseph et al., 2013 - Google Patents

A high-resistivity SiGe BiCMOS technology for WiFi RF front-end-IC solutions

Joseph et al., 2013

Document ID
4563300353983428485
Author
Joseph A
Gambino J
Rassel R
Johnson E
Ding H
Parthasarthy S
Vanakuru V
Sharma S
Jaffe M
Liu D
Zierak M
Camillo-Castillo R
Stamper A
Dunn J
Publication year
Publication venue
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

External Links

Snippet

We present for the first time a novel high resistivity bulk SiGe BiCMOS technology that has been optimized for a WiFi RF front-end-IC (FEIC) integration. A nominally 1000 Ohm-cm p- type silicon substrate is utilized to integrate several SiGe HBTs for power amplifiers (PAs), a …
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