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Choisnet et al., 2024 - Google Patents

Cross-evaluation of critical dimension measurement techniques

Choisnet et al., 2024

Document ID
4902343713481832325
Author
Choisnet T
Hammouti A
Gagneur V
Reche J
Rademaker G
Freychet G
Jullien G
Ducote J
Gergaud P
Le Cunff D
Publication year
Publication venue
Journal of Micro/Nanopatterning, Materials, and Metrology

External Links

Snippet

Critical dimension control is essential in the semiconductor industry and becomes more challenging as photolithography limits keep getting pushed to reach technological nodes smaller than 10 nm. To ensure the quality and control of the processes, it becomes …
Continue reading at www.spiedigitallibrary.org (other versions)

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Exposure apparatus for microlithography
    • G03F7/70483—Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
    • G03F7/70616—Wafer pattern monitoring, i.e. measuring printed patterns or the aerial image at the wafer plane
    • G03F7/70625—Pattern dimensions, e.g. line width, profile, sidewall angle, edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Exposure apparatus for microlithography
    • G03F7/70483—Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management and control, including software
    • G03F7/705—Modelling and simulation from physical phenomena up to complete wafer process or whole workflow in wafer fabrication
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons

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