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Galiev et al., 2015 - Google Patents

Metamorphic nanoheterostructures for millimeter-wave electronics

Galiev et al., 2015

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Document ID
4946355254977428096
Author
Galiev G
Khabibullin R
Ponomarev D
Yachmenev A
Bugaev A
Maltsev P
Publication year
Publication venue
Nanotechnologies in Russia

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Snippet

Electrical parameters and root-mean-square surface roughness of the metamorphic InAlAs/InGaAs/InAlAs nanoheterostructures with different indium contents (0.30–0.55) have been investigated. Field-effect transistors with the gate length L g= 140− 265 nm fabricated …
Continue reading at www.researchgate.net (PDF) (other versions)

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