[go: up one dir, main page]

Vispute et al., 1996 - Google Patents

Heteroepitaxial structures of SrTiO3/TiN on Si (100) by in situ pulsed laser deposition

Vispute et al., 1996

View PDF
Document ID
5028059968590304605
Author
Vispute R
Narayan J
Dovidenko K
Jagannadham K
Parikh N
Suvkhanov A
Budai J
Publication year
Publication venue
Journal of applied physics

External Links

Snippet

High‐quality ceramics based heteroepitaxial structures of oxide‐nitride‐semiconductors, ie, SrTiO3/TiN/Si (100) have been fabricated by in situ pulsed laser deposition. The dependence of substrate temperature and oxygen partial pressure on the crystalline quality …
Continue reading at pubs.aip.org (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L39/00—Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L39/24—Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof
    • H01L39/2419—Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof the superconducting material comprising copper oxide
    • H01L39/2422—Processes for depositing or forming superconductor layers
    • H01L39/2454—Processes for depositing or forming superconductor layers characterised by the substrate
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/516—Insulating materials associated therewith with at least one ferroelectric layer
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors

Similar Documents

Publication Publication Date Title
Lee et al. Heteroepitaxial growth of BaTiO3 films on Si by pulsed laser deposition
Park et al. Effects of very thin strain layers on dielectric properties of epitaxial Ba 0.6 Sr 0.4 TiO 3 films
Moon et al. Roles of buffer layers in epitaxial growth of SrTiO3 films on silicon substrates
KR20010062134A (en) Semiconductor structure having a crystalline alkaline earth metal silicon nitride/oxide interface with silicon
Vispute et al. Heteroepitaxial structures of SrTiO3/TiN on Si (100) by in situ pulsed laser deposition
KR20010062133A (en) Method for fabricating a semiconductor structure having a stable crystalline interface with silicon
Kijima et al. Preparation of Bi4Ti3O12 thin films by MOCVD method and electrical properties of metal/ferroelectric/insulator/semiconductor structure
US6605151B1 (en) Oxide thin films and composites and related methods of deposition
Le et al. Epitaxial growth by atomic layer deposition and properties of high-k barium strontium titanate on Zintl-templated Ge (001) substrates
HORIKAWA et al. (Ba 0.75 Sr 0.25) TiO 3 Films for 256 Mbit DRAM
Li Ferroelectric/superconductor heterostructures
Zhu et al. Microstructural and electrical properties of BaTiO3 epitaxial films on SrTiO3 substructures with a LaNiO3 conductive layer as a template
Lee et al. Structural and dielectric properties of epitaxial SrTiO 3 films grown on Si (100) substrate with TiN buffer layer
Wu et al. Epitaxial and highly electrical conductive La 0.5 Sr 0.5 TiO 3 films grown by pulsed laser deposition in vacuum
Yen et al. Domain structure of epitaxial PbTiO3 thin films on LaAlO3 (100) grown by metal organic chemical vapor deposition
Moon et al. Formation and electrical properties of heteroepitaxial SrTiO3/SrVO3− x/Si (100) structures
Tiwari et al. Synthesis of epitaxial Pt on (100) Si using TiN buffer layer by pulsed laser deposition
Kalyanaraman et al. Influence of oxygen background pressure on crystalline quality of SrTiO 3 films grown on MgO by pulsed laser deposition
Kim et al. Growth of bismuth silicate films on Si and its dielectric properties
Yanase et al. Epitaxial Growth of Ti1-xAl xN Buffer Layer for a Ferroelectric (Ba, Sr) TiO3 Capacitor on Si Substrate
Kakuno et al. Growth process and interfacial structure of epitaxial Y2O3/Si thin films deposited by pulsed laser deposition
Moon et al. Growth of crystalline SrTiO3 films on Si substrates using thin fluoride buffer layers and their electrical properties
Hudner et al. Growth and characterization of yttrium oxide thin layers on silicon deposited by yttrium evaporation in atomic oxygen
Ishiwara et al. Oriented Growth of SrTiO3 Films on Si (100) Substrates Using In—situ Cleaning By Excited Hydrogen
Tsai et al. Characterization of yttria-stabilized zirconia thin films grown by planar magnetron sputtering