Daugherty, 1994 - Google Patents
Cleaning and pelliclizationDaugherty, 1994
- Document ID
- 5062154457528158058
- Author
- Daugherty S
- Publication year
- Publication venue
- 64-to 256-Megabit Reticle Generation: Technology Requirements and Approaches: A Critical Review
External Links
Snippet
The final step in the reticle manufacturing process takes place in the Cleaning and Pelliclization Area. Traditionally, this area covers reticle clean, pellicle mount, and particle inspection. Pellicles are used to protect the clean reticle: the pellicle membrane holds air …
- 238000004140 cleaning 0 title abstract description 99
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/94—Investigating contamination, e.g. dust
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Exposure apparatus for microlithography
- G03F7/708—Construction of apparatus, e.g. environment, hygiene aspects or materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Exposure apparatus for microlithography
- G03F7/70216—Systems for imaging mask onto workpiece
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101255923B1 (en) | Methods and systems for detecting defects on a reticle | |
| Turkot et al. | EUV progress toward HVM readiness | |
| US8064038B2 (en) | Inspection apparatus, lithographic system provided with the inspection apparatus and a method for inspecting a sample | |
| US7630053B2 (en) | Method of manufacturing semiconductor device and liquid immersion lithography system | |
| Miyai et al. | Actinic patterned mask defect inspection for EUV lithography | |
| US7130037B1 (en) | Systems for inspecting wafers and reticles with increased resolution | |
| Liang et al. | EUV mask infrastructure readiness and gaps for TD and HVM | |
| Bonam et al. | EUV mask and wafer defectivity: strategy and evaluation for full die defect inspection | |
| Goldfarb et al. | Through-pellicle defect inspection of EUV masks using an ArF-based inspection tool | |
| Weiss et al. | Actinic review of EUV masks: first results from the AIMS EUV system integration | |
| Kamo et al. | Evaluation of extreme ultraviolet mask defect using blank inspection, patterned mask inspection, and wafer inspection | |
| Daugherty | Cleaning and pelliclization | |
| Lawliss et al. | Repairing native defects on EUV mask blanks | |
| Jonckheere | EUV mask defectivity–a process of increasing control toward HVM | |
| Hirano et al. | EUV patterned mask inspection performance of an advanced projection electron microscope (PEM) system for hp 16 nm and beyond | |
| van de Kerkhof et al. | Particle removal tool to repair particle defects on EUV reticles | |
| Gallagher et al. | Learning from native defects on EUV mask blanks | |
| Woo et al. | Through-pellicle imaging of extreme ultraviolet mask with extreme ultraviolet ptychography microscope | |
| Broadbent Jr et al. | 1X HP EUV reticle inspection with a 193nm inspection system | |
| Kohyama et al. | An update on the improvement in optimization of point-of-use filtration of metal oxide photoresists | |
| Turley et al. | Exploring EUV mask backside defectivity and control methods | |
| Takai et al. | Process capability of etched multilayer EUV mask | |
| Cheong et al. | EUV mask cleans comparison of frontside and dual-sided concurrent cleaning | |
| Naka et al. | Capability of particle inspection on patterned EUV mask using model EBEYE M | |
| Harada et al. | Development of actual EUV mask observation method for micro coherent EUV scatterometry microscope |