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Giubilato et al., 2011 - Google Patents

Tests of monolithic pixel detectors in SOI technology with depleted substrate

Giubilato et al., 2011

Document ID
5103973097399185314
Author
Giubilato P
Battaglia M
Bisello D
Contarato D
Denes P
Kim T
Mattiazzo S
Pantano D
Pozzobon N
Tindall C
Zalusky S
Publication year
Publication venue
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

External Links

Snippet

This paper reviews the R&D program on monolithic pixel sensors in silicon-on-insulator technology carried out by LBNL, the University and INFN, Padova and SCIPP-UCSC. The main issues addressed by the R&D, back-gating and radiation tolerance, are discussed …
Continue reading at www.sciencedirect.com (other versions)

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    • H01L27/144—Devices controlled by radiation
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    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
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    • H01L27/144—Devices controlled by radiation
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    • G—PHYSICS
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    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
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