Johnson et al., 2002 - Google Patents
Dose reproducibility in Axcelis GSD implanters using Stabil-Ion gaugeJohnson et al., 2002
View PDF- Document ID
- 511109181804817901
- Author
- Johnson R
- Tysinger R
- Publication year
- Publication venue
- Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
External Links
Snippet
Long-term dose reproducibility and tool to tool dose matching in the Axcelis GSD end-station is critically dependent on process chamber pressure measurement and Pressure Compensation factor selection. Pressure Compensation factor (PCOMP) determination is …
- 238000000034 method 0 abstract description 36
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6297510B1 (en) | Ion implant dose control | |
| KR20060043398A (en) | Ion implantation dose control | |
| US12403426B2 (en) | Isotope ratio measurement | |
| US6984833B2 (en) | Ion implanter and method for controlling the same | |
| Johnson et al. | Dose reproducibility in Axcelis GSD implanters using Stabil-Ion gauge | |
| US6756785B2 (en) | Pressure controlled degas system for hot cathode ionization pressure gauges | |
| TWI749902B (en) | Ion implanter and method of implanting substrate | |
| Bley | Quantitative measurements with quadrupole mass spectrometers: Important specifications for reliable measurements | |
| Jousten et al. | Comparison of the standards for high and ultrahigh vacuum at three national standards laboratories | |
| Arnold et al. | Nonstable behavior of widely used ionization gauges | |
| US7009193B2 (en) | Utilization of an ion gauge in the process chamber of a semiconductor ion implanter | |
| KR102162312B1 (en) | Method of performing calibration of mass flow and apparatus therefor | |
| CN115727909A (en) | Method for reducing zero drift of ultrasonic water meter | |
| US6627874B1 (en) | Pressure measurement using ion beam current in a mass spectrometer | |
| US20240194444A1 (en) | Ion beam current measurement device and ion beam implantation system | |
| US20060011080A1 (en) | Method and apparatus for electron-beam lithography | |
| US7057191B2 (en) | Method of controlling implant dosage and pressure compensation factor in-situ | |
| Poulter et al. | Reproducibility of the performance of Pirani gauges | |
| JP2000011942A (en) | Ion implantation apparatus | |
| Breeden et al. | Improved dose performance using Threshold Activated Dose Control™ | |
| US20050092595A1 (en) | Ion gauge condition detector and switching circuit | |
| Halling et al. | Automatic determination of pressure compensation factors without requiring wafer implants | |
| CN107727215A (en) | Dyestuff automatic weighing modification method, device, storage medium and computer equipment | |
| Sano et al. | Dose control accuracy in pressure compensation | |
| Jousten | ISO standards for vacuum metrology |