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Aloisio et al. - Google Patents

Aarts, ACT, R. van der Hout, JCJ Paasschens, AJ Scholten, MB Willemsen, and DBM Klaassen. New fundamental insights into capacitance modeling of laterally …

Aloisio et al.

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Document ID
5213034096205942236
Author
Aloisio M
Alvarado J
Ananthan H
Heringa A
De Keersgieter A
Ando M
Andrieu F
Diing-Shenp A
Angelini A
Anikeev S
Antoniadis D
Aoulaiche M

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2006 Index Page 1 2006 Index IEEE Transactions on Electron Devices Vol. 53 This index covers all technical items — papers, correspondence, reviews, etc. — that appeared in this periodical during 2006, and items from previous years that were commented upon or corrected …
Continue reading at ieeexplore.ieee.org (PDF) (other versions)

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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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