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Oates, 1996 - Google Patents

Electromigration failure distribution of contacts and vias as a function of stress conditions in submicron IC metallizations

Oates, 1996

Document ID
5297043948428236458
Author
Oates A
Publication year
Publication venue
Proceedings of International Reliability Physics Symposium

External Links

Snippet

Electromigration testing of integrated circuit metallizations requires the use of accelerated testing. Accurate extrapolation to circuit operating conditions requires a thorough understanding of the impact of the accelerated stress conditions on the parameters of the …
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Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer

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