[go: up one dir, main page]

Nahm, 2017 - Google Patents

Sintering effect on varistor properties and degradation behavior of ZVMB varistor ceramics

Nahm, 2017

Document ID
5311031064619207810
Author
Nahm C
Publication year
Publication venue
Journal of Materials Science: Materials in Electronics

External Links

Snippet

Abstract ZnO–V2O5–Mn3O4–Bi2O3 (ZVMB) varistor ceramics were sintered at a low temperature range of 800–875° C, and the microstructure, electrical properties, dielectric characteristics, and DC-accelerated aging behavior were systematically investigated …
Continue reading at link.springer.com (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/105—Varistor cores
    • H01C7/108—Metal oxide
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/12—Overvoltage protection resistors
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/18—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material comprising a plurality of layers stacked between terminals
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/008—Thermistors
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L41/00—Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics

Similar Documents

Publication Publication Date Title
Nahm Effect of erbium on varistor characteristics of vanadium oxide-doped zinc oxide ceramics
Nahm Nb2O5 doping effect on electrical properties of ZnO–V2O5–Mn3O4 varistor ceramics
Nahm Low-temperature sintering effect on varistor properties of ZnO–V2O5–MnO2–Nb2O5–Bi2O3 ceramics
Nahm Effect of sintering temperature on varistor properties and aging characteristics of ZnO–V2O5–MnO2 ceramics
Nahm DC accelerated aging behavior of Co–Dy–Nb doped Zn–V–M-based varistors with sintering process
Nahm Sintering effect on varistor properties and degradation behavior of ZVMB varistor ceramics
Nahm Effect of Yb2O3 addition on varistor properties and aging characteristics of ZnO–V2O5–Mn3O4 system
Nahm Major effects on varistor properties of ZnO–V2O5–MnO2–Nb2O5–Er2O3 ceramics with sintering changes
Nahm Varistor characteristics of ZnO/V2O5/MnO2/Nb2O5 semiconducting ceramics with Tb4O7 addition
Nahm Effect of sintering process on electrical properties and ageing behavior of ZnO–V2O5–MnO2–Nb2O5 varistor ceramics
Nahm Electrical and dielectric characteristics of erbium-added ZnO–V2O5-based varistor ceramics
Park et al. Sintering effect on electrical properties and aging behavior of quaternary ZnO–V2O5–Mn3O4–Nb2O5 ceramics
Nahm Improvement of electrical properties of V2O5 modified ZnO ceramics by Mn-doping for varistor applications
Nahm Characteristics of ZnO V2O5 MnO2 Nb2O5 Er2O3 semiconducting varistors with sintering processing
Nahm Effect of sintering temperature on varistor properties of Zn–V–Mn–Nb–Tb oxide ceramics
Nahm Major effects on non-ohmic properties and aging stress behavior of ZPCCD semiconducting varistors with Er2O3 doping changes
Nahm Sintering effect on electrical properties and pulse aging behavior of (V2O5-Mn3O4-Er2O3)-doped zinc oxide varistor ceramics
Nahm Effect of gadolinia addition on varistor characteristics of vanadium oxide–doped zinc oxide ceramics
Nahm Effect of sintering temperature on electrical properties, dielectric characteristics, and aging behavior of ZnO–V2O5-based varistor ceramics modified with Bi2O3
Nahm Influence of Nb addition on microstructure, electrical, dielectric properties, and aging behavior of MnCoDy modified Zn–V-based varistors
Nahm Effect of Bi2O3 doping on microstructure and electrical properties of ZnO–V2O5–Mn3O4 semiconducting ceramics
Nahm Varistor properties and aging behavior of ZnO-V2O5-Mn3O4 ceramics with sintering process
Kharchouche Effect of sintering temperature on microstructure and electrical properties of ZnO-0.5 mol% V2O5-0.5 mol% Cr2O3 varistors
Nahm Sintering temperature dependence on microstructure and non-ohmic properties of ZVMND ceramic semiconductors
Nahm Microstructure, electrical and dielectric properties, and impulse clamping characteristics of ZnO–V2O5–Mn3O4 semiconducting ceramics modified with Er2O3