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Kim et al., 2004 - Google Patents

Characteristics of ALD HfSiO/sub x/using new Si precursors for gate dielectric applications

Kim et al., 2004

Document ID
5312963904394426876
Author
Kim Y
Lim H
Jung H
Lee J
Park J
Han S
Lee J
Doh S
Kim J
Lee N
Kang H
Chung Y
Kim H
Lee N
Ramanathan S
Seidel T
Boleslawski M
Irvine G
Kim B
Lee H
Publication year
Publication venue
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.

External Links

Snippet

We have successfully developed a process for ALD HfSiO/sub x/that can provide excellent compositional control by using new Si precursors, Si/sub 2/Cl/sub 6/(HCDS) and SiH [(CH/sub 3/)/sub 2/]/sub 3/(tDMAS). In addition, comparisons of electrical properties of …
Continue reading at ieeexplore.ieee.org (other versions)

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