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Gila et al., 2000 - Google Patents

A comparison of gallium gadolinium oxide and gadolinium oxide for use as dielectrics in GaN MOSFETs

Gila et al., 2000

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Document ID
5477563688044427684
Author
Gila B
Lee K
Johnson W
Ren F
Abernathy C
Pearton S
Hong M
Kwo J
Mannaerts J
Anselm K
Publication year
Publication venue
Proceedings 2000 IEEE/Cornell Conference on High Performance Devices (Cat. No. 00CH37122)

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Amorphous gadolinium gallium oxide (GGG) and crystalline gadolinium oxide (Gd/sub 2/O/sub 3/) have been investigated as dielectrics for fabrication of GaN metal oxide semiconductor field effect transistors. GGG, deposited by e-beam evaporation in a molecular …
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