[go: up one dir, main page]

Moon et al., 2010 - Google Patents

An area-efficient 0.13-μm CMOS multiband WCDMA/HSDPA receiver

Moon et al., 2010

Document ID
5632459689603661570
Author
Moon H
Han J
Choi S
Keum D
Park B
Publication year
Publication venue
IEEE Transactions on Microwave Theory and Techniques

External Links

Snippet

In this paper, a multiband wideband code-division multiple access/high-speed downlink packet access direct-conversion receiver to cover all six Third-Generation Partnership Project bands is implemented in a 0.13-μm CMOS process. To reduce the increase of chip …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/403—Circuits using the same oscillator for generating both the transmitter frequency and the receiver local oscillator frequency
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06—Receivers
    • H04B1/16—Circuits
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06—Receivers
    • H04B1/10—Means associated with receiver for limiting or suppressing noise or interference induced by transmission
    • H04B1/109—Means associated with receiver for limiting or suppressing noise or interference induced by transmission by improving strong signal performance of the receiver when strong unwanted signals are present at the receiver input
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14—Balanced arrangements
    • H03D7/1425—Balanced arrangements with transistors
    • H03D7/1441—Balanced arrangements with transistors using field-effect transistors
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
    • H03D2200/0041—Functional aspects of demodulators
    • H03D2200/0088—Reduction of intermodulation, nonlinearities, adjacent channel interference; intercept points of harmonics or intermodulation products
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/16—Multiple-frequency-changing
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
    • H03J3/00—Continuous tuning

Similar Documents

Publication Publication Date Title
Steyaert et al. A 2-V CMOS cellular transceiver front-end
Zargari et al. A single-chip dual-band tri-mode CMOS transceiver for IEEE 802.11 a/b/g wireless LAN
Magoon et al. A single-chip quad-band (850/900/1800/1900 MHz) direct conversion GSM/GPRS RF transceiver with integrated VCOs and fractional-N synthesizer
Kaczman et al. A single-chip tri-band (2100, 1900, 850/800 MHz) WCDMA/HSDPA cellular transceiver
Rogin et al. A 1.5-V 45-mW direct-conversion WCDMA receiver IC in 0.13-μm CMOS
Abidi CMOS wireless transceivers: The new wave
Bouras et al. A digitally calibrated 5.15-5.825 GHz transceiver for 802.11 a wireless LANs in 0.18/spl mu/m CMOS
Kim et al. A 54–862-MHz CMOS transceiver for TV-band white-space device applications
Perraud et al. A direct-conversion CMOS transceiver for the 802.11 a/b/g WLAN standard utilizing a Cartesian feedback transmitter
Larson RF and microwave hardware challenges for future radio spectrum access
Razavi RF CMOS transceivers for cellular telephony
Kuo et al. A 1.2 V 114 mW dual-band direct-conversion DVB-H tuner in 0.13$\mu $ m CMOS
Gharpurey et al. A direct-conversion receiver for the 3G WCDMA standard
Lim et al. A 65-nm CMOS $2\times2 $ MIMO Multi-Band LTE RF Transceiver for Small Cell Base Stations
Im et al. A broadband CMOS RF front-end for universal tuners supporting multi-standard terrestrial and cable broadcasts
Huang et al. A High-Linearity WCDMA/GSM Reconfigurable Transceiver in 0.13-$\mu\hbox {m} $ CMOS
Tan et al. An Ultra-Low-Cost High-Performance Bluetooth SoC in 0.11-$\mu {\hbox {m}} $ CMOS
Choke et al. A multiband mobile analog TV tuner SoC with 78-dB harmonic rejection and GSM blocker detection in 65-nm CMOS
Wu et al. A 0.9–5.8-GHz software-defined receiver RF front-end with transformer-based current-gain boosting and harmonic rejection calibration
Moon et al. An area-efficient 0.13-μm CMOS multiband WCDMA/HSDPA receiver
Della Torre et al. A 20 mW 3.24${\hbox {mm}}^{2} $ Fully Integrated GPS Radio for Location Based Services
Li et al. A continuously and widely tunable 5 dB-NF 89.5 dB-gain 85.5 dB-DR CMOS TV receiver with digitally-assisted calibration for multi-standard DBS applications
Vassiliou et al. A 0.18/spl mu/m CMOS Dual-Band Direct-Conversion DVB-H Receiver
Chen et al. A 0.13$\mu $ m CMOS Quad-Band GSM/GPRS/EDGE RF Transceiver Using a Low-Noise Fractional-N Frequency Synthesizer and Direct-Conversion Architecture
Song et al. A 0.25-/spl mu/m CMOS quad-band GSM RF transceiver using an efficient LO frequency plan