Sarang, 2018 - Google Patents
Gain characteristics in single-mode pumped diamond Raman lasersSarang, 2018
View PDF- Document ID
- 5835060923307484767
- Author
- Sarang S
- Publication year
External Links
Snippet
Single longitudinal mode (SLM) lasers are significant for applications in spectroscopy, precision measurements, and high-resolution interferometry. The techniques for achieving SLM in inversion lasers are well-developed, as are also frequency extension by frequency …
- 238000001069 Raman spectroscopy 0 title abstract description 339
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling a device placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling a device placed within the cavity using a non-linear optical device, e.g. exhibiting Brillouin- or Raman-scattering
- H01S3/109—Frequency multiplying, e.g. harmonic generation
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling a device placed within the cavity
- H01S3/1063—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling a device placed within the cavity using a solid state device provided with at least one potential jump barrier
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
- H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/05—Construction or shape of optical resonators; Accomodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08018—Mode suppression
- H01S3/08022—Longitudinal mode control, e.g. specifically multimode
- H01S3/08031—Single-mode emission
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/05—Construction or shape of optical resonators; Accomodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/081—Construction or shape of optical resonators or components thereof comprising more than two reflectors
- H01S3/083—Ring lasers
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Pulse generation, e.g. Q-switching, mode locking
- H01S3/1106—Mode locking
- H01S3/1112—Passive mode locking
- H01S3/1115—Passive mode locking using a saturable absorber
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/05—Construction or shape of optical resonators; Accomodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/05—Construction or shape of optical resonators; Accomodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0619—Coatings, e.g. AR, HR, passivation layer
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/05—Construction or shape of optical resonators; Accomodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/146—External cavity lasers using a fiber as external cavity
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/14—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves characterised by the material used as the active medium
- H01S3/16—Solid materials
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/14—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves characterised by the material used as the active medium
- H01S3/22—Gases
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/30—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves using scattering effects, e.g. stimulated Brillouin or Raman effects
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S1/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of electromagnetic waves of wavelength longer than that of infra-red waves
- H01S1/06—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of electromagnetic waves of wavelength longer than that of infra-red waves gaseous, i.e. beam masers
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Smith | Stabilized, single-frequency output from a long laser cavity | |
| US8165178B2 (en) | Method and apparatus for pumping and operating optical parametric oscillators using DFB fiber lasers | |
| Sennaroglu | Broadly tunable Cr4+-doped solid-state lasers in the near infrared and visible | |
| Nevsky et al. | A narrow-line-width external cavity quantum dot laser for high-resolution spectroscopy in the near-infrared and yellow spectral ranges | |
| Eismann et al. | An all-solid-state laser source at 671 nm for cold-atom experiments with lithium | |
| Camargo et al. | Coherent Dual-Frequency Emission of a Vertical External-Cavity Semiconductor Laser at the Cesium ${\rm D} _ {2} $ Line | |
| Zayhowski | Passively Q-switched microchip lasers | |
| Cho et al. | Compactly efficient CW 3 to 4.5 μm wavelength tunable mid-infrared laser in optically pumped semiconductor laser with intracavity OPO | |
| Abramski et al. | Frequency stabilisation of lasers | |
| Blau et al. | Single-mode operation of a mid-infrared optical parametric oscillator using volume-Bragg-grating cavity mirrors | |
| Sarang | Gain characteristics in single-mode pumped diamond Raman lasers | |
| Galzerano et al. | Experimental investigation of the 2.1-μm single-mode Tm-Ho: KYF laser | |
| Garnache et al. | Design and properties of high-power highly coherent single-frequency VECSEL emitting in the near-to mid-IR for photonic applications | |
| Liu et al. | A stable all-solid-state continuous-wave single-longitudinal-mode Nd: YVO4 laser at 1064 nm based on the molecular iodine absorption | |
| Sherstov et al. | Diode-laser system for high-resolution spectroscopy of the 2 S 1/2→ 2 F 7/2 octupole transition in 171 Yb+ | |
| Camargo et al. | Tunable high-purity microwave signal generation from a dual-frequency VECSEL at 852 nm | |
| Yb et al. | Watt-level Sub-100 Femtosecond Pulses at 2 µm | |
| Galzerano et al. | Frequency-and intensity-noise measurements of a widely tunable 2-/spl mu/m Tm-Ho: KYF laser | |
| Kleine-Ostmann et al. | Dual-wavelength fibre laser | |
| Nagl | The First Directly Diode-Pumped Few-Cycle Cr-Doped II-VI Laser | |
| Li | High precision Raman lasers | |
| Ghanbari | Continuous-wave and passively mode-locked alexandrite lasers pumped at 532 nm | |
| Dumont et al. | Evaluation of the noise properties of a dual-frequency VECSEL for compact cs atomic clocks | |
| Hessenius | Novel Cavities and Functionality in High-Power High-Brightness Semiconductor Vertical External Cavity Surface Emitting Lasers | |
| Elsafty | Investigation of longitudinal modes for different microchip Nd: YVO4/KTP green lasers |