Hwang et al., 2011 - Google Patents
Multi-parametric growth of silicon nanowires in a single platform by laser-induced localizedheat sourcesHwang et al., 2011
- Document ID
- 5877284700412687151
- Author
- Hwang D
- Ryu S
- Grigoropoulos C
- Publication year
- Publication venue
- Nanotechnology
External Links
Snippet
Nanoscale-synthesized materials hold great promise for the realization of future generation devices. In order to fulfil this exceptional promise, new techniques must be developed that will enable the precise layout and assembly of the heterogeneous components into …
- 239000002070 nanowire 0 title abstract description 86
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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