Mahalingam et al., 2017 - Google Patents
A 30-GHz power-efficient PLL frequency synthesizer for 60-GHz applicationsMahalingam et al., 2017
- Document ID
- 6075012111554581430
- Author
- Mahalingam N
- Wang Y
- Thangarasu B
- Ma K
- Yeo K
- Publication year
- Publication venue
- IEEE Transactions on Microwave Theory and Techniques
External Links
Snippet
This paper presents the design and verification of a proposed 30-GHz power-efficient phase- locked loop (PLL) frequency synthesizer for 60-GHz applications. Fabricated by a commercial 0.18-μm SiGe BiCMOS process, the synthesizer employs coupled LC tank …
- 229920000729 poly(L-lysine) polymer 0 title 1
Classifications
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
- H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1203—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier being a single transistor
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1231—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more bipolar transistors
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/099—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/16—Indirect frequency synthesis, i.e. generating a desired one of a number of predetermined frequencies using a frequency- or phase-locked loop
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B19/00—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
- H03B2200/006—Functional aspects of oscillators
- H03B2200/0062—Bias and operating point
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B1/00—Details
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/06—Receivers
- H04B1/16—Circuits
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B21/00—Generation of oscillations by combining unmodulated signals of different frequencies
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03C—MODULATION
- H03C3/00—Angle modulation
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Mahalingam et al. | A 30-GHz power-efficient PLL frequency synthesizer for 60-GHz applications | |
| Murphy et al. | A low phase noise, wideband and compact CMOS PLL for use in a heterodyne 802.15. 3c transceiver | |
| Li et al. | A 21–48 GHz subharmonic injection-locked fractional-N frequency synthesizer for multiband point-to-point backhaul communications | |
| Mukhopadhyay et al. | Reconfigurable RFICs in Si-based technologies for a compact intelligent RF front-end | |
| Wang et al. | W-band silicon-based frequency synthesizers using injection-locked and harmonic triplers | |
| Ahmadi-Mehr et al. | Analysis and design of a multi-core oscillator for ultra-low phase noise | |
| Zou et al. | A low phase noise and wide tuning range millimeter-wave VCO using switchable coupled VCO-cores | |
| Kang et al. | A W-band low-noise PLL with a fundamental VCO in SiGe for millimeter-wave applications | |
| Chiang et al. | A 200-GHz inductively tuned VCO with-7-dBm output power in 130-nm SiGe BiCMOS | |
| US7209017B2 (en) | Symmetrical linear voltage controlled oscillator | |
| Monaco et al. | Injection-Locked CMOS Frequency Doublers for $\mu $-Wave and mm-Wave Applications | |
| Wagner et al. | A very low phase-noise transformer-coupled oscillator and PLL for 5G communications in 0.12$\mu $ m SiGe BiCMOS | |
| Chao et al. | Analysis and design of wide-band millimeter-wave transformer-based VCO and ILFDs | |
| Zhou et al. | A 0.4–6-GHz frequency synthesizer using dual-mode VCO for software-defined radio | |
| Koukab et al. | A GSM-GPRS/UMTS FDD-TDD/WLAN 802.11 abg multi-standard carrier generation system | |
| Yeh et al. | Design and analysis of a $ W $-band divide-by-three injection-locked frequency divider using second harmonic enhancement technique | |
| Kuo et al. | Design and analysis of a 77.3% locking-range divide-by-4 frequency divider | |
| Zhang et al. | A 21.7-to-41.7-GHz injection-locked LO generation with a narrowband low-frequency input for multiband 5G communications | |
| Chao et al. | Analysis and design of a 14.1-mW 50/100-GHz transformer-based PLL with embedded phase shifter in 65-nm CMOS | |
| Wu et al. | A 49-to-62 GHz quadrature VCO with bimodal enhanced-magnetic-tuning technique | |
| Dal Toso et al. | A 0.06 mm $^{2} $11 mW local oscillator for the GSM standard in 65 nm CMOS | |
| Hsieh et al. | A low phase noise 210-GHz triple-push ring oscillator in 90-nm CMOS | |
| Lee et al. | A 28.5–32-GHz fast settling multichannel PLL synthesizer for 60-GHz WPAN radio | |
| Lu et al. | A compact and low power 5–10 GHz quadrature local oscillator for cognitive radio applications | |
| Yu et al. | A Single-Chip 125-MHz to 32-GHz Signal Source in 0.18-$\mu $ m SiGe BiCMOS |