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Liu et al., 2024 - Google Patents

Improving the Manufacturability of Low-Temperature GaN Ohmic Contact by Blocking the Fluorine Ion Injection

Liu et al., 2024

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Document ID
6091960958969166642
Author
Liu T
Li X
Han Z
Zhai L
Wang J
You S
Zhang J
Zhang J
Cheng Z
Zhang Y
Li Q
Hao Y
Publication year
Publication venue
IEEE Journal of the Electron Devices Society

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Snippet

Stabilizing the CMOS-compatible low-temperature Au-free GaN Ohmic contact is a critical work that determines the performance and yield of GaN power HEMTs in mass production. The instability of this contact has been puzzling the industry and academia for years. In this …
Continue reading at ieeexplore.ieee.org (PDF) (other versions)

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