[go: up one dir, main page]

Roy et al., 2005 - Google Patents

Effect of test condition and stress free temperature on the electromigration failure of Cu dual damascene submicron interconnect line-via test structures

Roy et al., 2005

View PDF
Document ID
6247651277281294142
Author
Roy A
Tan C
Kumar R
Chen X
Publication year
Publication venue
Microelectronics Reliability

External Links

Snippet

Atomic flux divergence (AFD) based finite element analyses have been performed to show the difference in the electromigration (EM) failure mechanisms at different test conditions for Cu dual damascene line-via test structures. A combined driving force approach adapted in …
Continue reading at www.academia.edu (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation; Temperature sensing arrangements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer

Similar Documents

Publication Publication Date Title
Hau-Riege et al. The effect of interlevel dielectric on the critical tensile stress to void nucleation for the reliability of Cu interconnects
Tan et al. Investigation of the effect of temperature and stress gradients on accelerated EM test for Cu narrow interconnects
Sukharev et al. A model for electromigration-induced degradation mechanisms in dual-inlaid copper interconnects: Effect of microstructure
Tu et al. A unified model of mean-time-to-failure for electromigration, thermomigration, and stress-migration based on entropy production
Beyne et al. Electromigration activation energies in alternative metal interconnects
Tan et al. Revisit to the finite element modeling of electromigration for narrow interconnects
Zahedmanesh et al. Airgaps in nano-interconnects: Mechanics and impact on electromigration
Gan et al. Experimental characterization and modeling of the reliability of three-terminal dual-damascene Cu interconnect trees
Basavalingappa et al. Modeling the copper microstructure and elastic anisotropy and studying its impact on reliability in nanoscale interconnects
Sun et al. Accelerating electromigration aging for fast failure detection for nanometer ICs
Roy et al. Effect of test condition and stress free temperature on the electromigration failure of Cu dual damascene submicron interconnect line-via test structures
Prasad et al. The connection between electromigration resistance and thin-film adhesion and their degradation with temperature
Antonova et al. Finite elements for electromigration analysis
Ding et al. Thermomigration-induced void formation in Cu-interconnects-Assessment of main physical parameters
Engler et al. High temperature electromigration behavior of cobalt lines observed by in situ transmission electron microscopy
Lee et al. Statistical study for electromigration reliability in dual-damascene Cu interconnects
Liang et al. Study on thermomigration-induced void formation in advanced copper interconnects
Abbasinasab et al. Blech effect in interconnects: Applications and design guidelines
Wang et al. Explaining an unusual electromigration behavior—A comprehensive experimental and theoretical analysis using finite element method
Lin et al. Effects of width scaling and layout variation on dual damascene copper interconnect electromigration
Ding et al. Cu interconnect lifetime estimation in the presence of thermal gradients
Heryanto et al. The effect of stress migration on electromigration in dual damascene copper interconnects
Weide-Zaage Exemplified calculation of stress migration in a 90nm node via structure
Chen et al. Measurements of effective thermal conductivity for advanced interconnect structures with various composite low-k dielectrics
Paik et al. Effect of dielectric materials on stress-induced damage modes in damascene Cu lines