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Yang et al., 2003 - Google Patents

Ferroelectric Memories using Randomly Oriented (Bi1-xLax) 4Ti3O12 Films

Yang et al., 2003

Document ID
6500878847927343126
Author
Yang B
Lee S
Kang Y
Noh K
Lee S
Kim N
Kweon S
Yeom S
Park Y
Publication year
Publication venue
Japanese journal of applied physics

External Links

Snippet

We report on superior reliabilities at high temperature of ferroelectric memories using [Bi 1-x La x] 4 Ti 3 O 12 (BLT) films, which are randomly oriented by special bake treatments. The ferroelectric memories are based on 0.35 µm complementary metal–oxide–semiconductor …
Continue reading at iopscience.iop.org (other versions)

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