[go: up one dir, main page]

Junige et al., 2021 - Google Patents

Area-selective molecular layer deposition of nylon 6, 2 polyamide: Growth on carbon and inhibition on silica

Junige et al., 2021

View HTML
Document ID
6513719901651343184
Author
Junige M
George S
Publication year
Publication venue
Journal of Vacuum Science & Technology A

External Links

Snippet

In microelectronic or nanoelectronic manufacturing, pattern transfer by directional reactive ion etching (RIE) progressively erodes amorphous carbon (aC) hard masks. To maintain critical dimensions and tolerances of high-aspect-ratio device structures, new carbonaceous …
Continue reading at pubs.aip.org (HTML) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material

Similar Documents

Publication Publication Date Title
Junige et al. Area-selective molecular layer deposition of nylon 6, 2 polyamide: Growth on carbon and inhibition on silica
US20220328301A1 (en) Film deposition apparatus for fine pattern forming
US9859128B2 (en) Self-aligned shielding of silicon oxide
US9875907B2 (en) Self-aligned shielding of silicon oxide
Tseng et al. Etch properties of resists modified by sequential infiltration synthesis
US7709344B2 (en) Integrated circuit fabrication process using gas cluster ion beam etching
KR20010076361A (en) Methods and Apparatus for Forming a Film on a Substrate
WO1995008840A1 (en) Method of fabricating sub-half-micron trenches and holes
US7029992B2 (en) Low oxygen content photoresist stripping process for low dielectric constant materials
US7449230B2 (en) Lithography pattern shrink process and articles
Biyikli et al. Self-aligned nanoscale processing solutions via selective atomic layer deposition of oxide, nitride, and metallic films
Choi et al. Highly selective atomic layer deposition of MoSiOx using inherently substrate-dependent processes
Brummer et al. Fabrication and characterization of a self-aligned gate stack for electronics applications
JP4758938B2 (en) Insulating film forming method and insulating film forming apparatus
US9929021B2 (en) Dry etching method and dry etching agent
WO2006035591A1 (en) Method for forming copper wiring
Gusmão Cacho et al. Study of plasma etching impact on chemoepitaxy directed self-assembly
JP3610745B2 (en) Method for forming interlayer insulating film
TW523555B (en) Method and apparatus for manufacturing semiconductor device
Darnon et al. Patterning of porous SiOCH using an organic mask: Comparison with a metallic masking strategy
Kwong et al. Effect of transition metal salts on the initiated chemical vapor deposition of polymer thin films
Schvartzman et al. Fluorinated diamondlike carbon templates for high resolution nanoimprint lithography
Sarrazin et al. Block copolymer selectivity: A new dry etch approach for cylindrical applications
JP2006128245A (en) Method of processing insulating film
JP2006093550A (en) Method of forming vanadium content film