Huang et al., 1999 - Google Patents
GSM transceiver front-end circuits in 0.25-/spl mu/m CMOSHuang et al., 1999
View PDF- Document ID
- 668323938870870679
- Author
- Huang Q
- Orsatti P
- Piazza F
- Publication year
- Publication venue
- IEEE Journal of Solid-State Circuits
External Links
Snippet
So far, CMOS has been shown to be capable of operating at radio-frequency (RF) frequencies, although the inadequacies of the device-level performance often have to be circumvented by innovations at the architectural level that tend to shift the burden to the …
- 239000000758 substrate 0 description 15
Classifications
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1441—Balanced arrangements with transistors using field-effect transistors
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
- H03D2200/0041—Functional aspects of demodulators
- H03D2200/0088—Reduction of intermodulation, nonlinearities, adjacent channel interference; intercept points of harmonics or intermodulation products
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1433—Balanced arrangements with transistors using bipolar transistors
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1408—Balanced arrangements with diodes
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
- H03D2200/0001—Circuit elements of demodulators
- H03D2200/0033—Current mirrors
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
- H03D2200/0041—Functional aspects of demodulators
- H03D2200/0047—Offset of DC voltage or frequency
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45183—Long tailed pairs
- H03F3/45188—Non-folded cascode stages
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
- H04B1/403—Circuits using the same oscillator for generating both the transmitter frequency and the receiver local oscillator frequency
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/16—Multiple-frequency-changing
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/06—Receivers
- H04B1/16—Circuits
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45704—Indexing scheme relating to differential amplifiers the LC comprising one or more parallel resonance circuits
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/372—Noise reduction and elimination in amplifier
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Huang et al. | GSM transceiver front-end circuits in 0.25-/spl mu/m CMOS | |
| Orsatti et al. | A 20-mA-receive, 55-mA-transmit, single-chip GSM transceiver in 0.25-/spl mu/m CMOS | |
| Ryynanen et al. | A dual-band RF front-end for WCDMA and GSM applications | |
| Huang et al. | The impact of scaling down to deep submicron on CMOS RF circuits | |
| US6275687B1 (en) | Apparatus and method for implementing a low-noise amplifier and mixer | |
| Rogin et al. | A 1.5-V 45-mW direct-conversion WCDMA receiver IC in 0.13-μm CMOS | |
| US7596364B2 (en) | Merged low-noise amplifier and balun | |
| Fong et al. | Monolithic RF active mixer design | |
| US8121579B2 (en) | Active mixer circuit and a receiver circuit or a millimeter-wave communication unit using it | |
| US6819914B2 (en) | Differential mixer injection with optional step gain control | |
| CN101183878B (en) | Low-power consumption wireless receiver radio frequency front end circuit | |
| Takahashi et al. | 1.9 GHz Si direct conversion receiver IC for QPSK modulation systems | |
| CN101202533A (en) | A low-power high-performance quadrature down-mixer | |
| US20070287403A1 (en) | Radio-Receiver Front-End and A Method For Frequency Converting An Input Signal | |
| KR100660978B1 (en) | Variable gain amplifier circuit | |
| US7184735B2 (en) | Radio frequency integrated circuit having symmetrical differential layout | |
| Itoh et al. | Even harmonic type direct conversion receiver ICs for mobile handsets: Design challenges and solutions | |
| Plouchart et al. | A 5.2 GHz 3.3 VI/Q SiGe RF transceiver | |
| US9520833B1 (en) | Active ring mixer | |
| JP4383259B2 (en) | Frequency converter and wireless communication device using the same | |
| Piazza et al. | A 0.25/spl mu/m CMOS transceiver front-end for GSM | |
| He | Fully integrated transceiver design in SOI processes | |
| Brenna et al. | A 2 GHz direct-conversion WCDMA modulator in 0.25/spl mu/m CMOS | |
| Wohlmuth et al. | A high-IP3 RF receiver chip set for mobile radio base stations up to 2 GHz | |
| Sabouri-S et al. | A single-chip GaAs MMIC image-rejection front-end for digital European cordless telecommunications |