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Kim et al., 2015 - Google Patents

Dark current improvement of the type-II InAs/GaSb superlattice photodetectors by using a gate bias control

Kim et al., 2015

Document ID
6850511526614039150
Author
Kim H
Myers S
Klein B
Kazemi A
Krishna S
Kim J
Lee S
Publication year
Publication venue
Journal of the Korean Physical Society

External Links

Snippet

The dark current of a type-II InAs/GaSb strained layer superlattice photodiode with an nip structure is reduced by using an active gate bias technique. To make the gate structure on the mesa sidewall of the photodiode, we used Si3N4 and Ti/Au as a dielectric film and a …
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