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Sun et al., 2019 - Google Patents

Improvement of SPAD Photon Detection Efficiency with Diffraction Window Layer

Sun et al., 2019

Document ID
6916099972385757725
Author
Sun F
Wu Z
Zhu S
Xu Y
Publication year
Publication venue
2019 China Semiconductor Technology International Conference (CSTIC)

External Links

Snippet

A new structure is proposed for single photon avalanche diodes (SPADs) to improve photon detection efficiency (PDE) in 180 nm CMOS process. This structure is achieved with a diffraction window layer which is manufactured in the first intermetallic dielectric (IMD1) …
Continue reading at ieeexplore.ieee.org (other versions)

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    • H01L31/08Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
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    • H01L31/107Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
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