[go: up one dir, main page]

Jamieson et al., 2003 - Google Patents

Novel detectors for single atom doping of quantum computer devices

Jamieson et al., 2003

View PDF
Document ID
7020949926509213837
Author
Jamieson D
Yang C
Pakes C
Hearne S
Prawer S
Stanley F
Dzurak A
Clark R
Publication year
Publication venue
AIP Conference Proceedings

External Links

Snippet

Devices that employ single atoms to store and manipulate information will be constructed in the near future. For example a solid state quantum computer device has been proposed that encodes information in the nuclear spin of shallow arrays of single 31P atoms (qubits) in a …
Continue reading at pubs.aip.org (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors

Similar Documents

Publication Publication Date Title
Jamieson et al. Controlled shallow single-ion implantation in silicon using an active substrate for sub-20‐keV ions
Jamieson et al. Deterministic doping
US8461541B2 (en) Radiation detector, method of manufacturing a radiation detector and use of the detector for measuring radiation
CN1295754C (en) Method and system for single ion implantation
Da Via et al. Advances in silicon detectors for particle tracking in extreme radiation environments
AU2002322184A1 (en) Method and system for single ion implantation
Singh et al. Electrostatically defined silicon quantum dots with counted antimony donor implants
Hall Semiconductor particle tracking detectors
EP1747579B1 (en) Method of implanting counted dopant ions
Yang et al. Single phosphorus ion implantation into prefabricated nanometre cells of silicon devices for quantum bit fabrication
EP3887869B1 (en) Hydrogenated amorphous silicon detector
Jamieson et al. Novel detectors for single atom doping of quantum computer devices
Jamieson et al. Deterministic atom placement by ion implantation: Few and single atom devices for quantum computer technology
Phlips et al. Silicon carbide pin diodes as radiation detectors
AU2005242730B2 (en) Implanted counted dopant ions
Beimforde Development of thin sensors and a novel interconnection technology for the upgrade of the ATLAS pixel system
Paulitsch Development and optimization of novel large area silicon pad sensors for the CMS High Granularity Calorimeter
Peng et al. The shift of breakdown voltage for silicon membrane strip detectors resulting from surface avalanche
Borri Characterization of 3D Silicon Assemblies for ATLAS Pixel Upgrade
Hopf et al. Development of a single ion detection system for the implantation of donors with nanoscale precision
Yang et al. Integration of single ion implantation method in focused ion beam system for nanofabrication
Mohamed Capability of silicon carbide Schottky diodes as radiation detector and for x-ray photon energy harvesting
Hill The Commissioning of a Cosmic-ray Telescope and an Investigation of the Physical Properties of a Double-metal Silicon Detector
Jamieson et al. Fabrication of single atom nanoscale devices by ion implantation
Trischuk Semiconductor trackers for future particle physics detectors