Ramzan et al., 2009 - Google Patents
Multiband RF-sampling receiver front-end with on-chip testability in 0.13 μm CMOSRamzan et al., 2009
View HTML- Document ID
- 7042038775471659926
- Author
- Ramzan R
- Andersson S
- Dabrowski J
- Svensson C
- Publication year
- Publication venue
- Analog Integrated Circuits and Signal Processing
External Links
Snippet
In this paper a flexible RF-sampling front-end primarily intended for WLAN standards operating in the 2.4 GHz and 5–6 GHz bands is presented. The circuit is implemented with on-chip Design for Test (DfT) features in 0.13 μm CMOS process. The front-end consists of a …
- 238000005070 sampling 0 title abstract description 60
Classifications
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45183—Long tailed pairs
- H03F3/45188—Non-folded cascode stages
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45197—Pl types
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H19/00—Networks using time-varying elements, e.g. N-path filters
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/06—Receivers
- H04B1/16—Circuits
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H15/00—Transversal filters
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M3/00—Conversion of analogue values to or from differential modulation
- H03M3/30—Delta-sigma modulation
- H03M3/39—Structural details of delta-sigma modulators, e.g. incremental delta-sigma modulators
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Blaakmeer et al. | Wideband balun-LNA with simultaneous output balancing, noise-canceling and distortion-canceling | |
| Chen et al. | Inductorless wideband CMOS low-noise amplifiers using noise-canceling technique | |
| Hollman et al. | A 2.7-V CMOS dual-mode baseband filter for PDC and WCDMA | |
| Jang et al. | Two-stage compact wideband flat gain low-noise amplifier using high-frequency feedforward active inductor | |
| US7982506B2 (en) | Voltage-current converter and filter circuit using same | |
| Salo et al. | 80-MHz bandpass ΔΣ modulators for multimode digital IF receivers | |
| JP2012156936A (en) | Semiconductor integrated circuit and method of operating the same | |
| Kitsunezuka et al. | A widely-tunable, reconfigurable CMOS analog baseband IC for software-defined radio | |
| US9148125B2 (en) | High order discrete time charge rotating passive infinite impulse response filter | |
| Saari et al. | A 240-MHz low-pass filter with variable gain in 65-nm CMOS for a UWB radio receiver | |
| Geis et al. | A 0.5 mm $^{2} $ power-scalable 0.5–3.8-ghz cmos dt-sdr receiver with second-order rf band-pass sampler | |
| Belostotski | No noise is good noise: Noise matching, noise canceling, and maybe a bit of both for wide-band LNAs | |
| Ru et al. | A discrete-time mixing receiver architecture with wideband harmonic rejection | |
| Liu et al. | Design and analysis of CMOS high-speed high dynamic-range track-and-hold amplifiers | |
| Krishnamurthy et al. | Analysis and design of submilliwatt interference-tolerant receivers leveraging N-path filter-based translational positive feedback | |
| Yang et al. | Millimeter-wave receiver with non-uniform time-approximation filter | |
| Abubaker et al. | Balun LNA thermal noise analysis and balancing with common-source degeneration resistor | |
| US7239183B2 (en) | Active current mode sampling circuit | |
| Tran | Ultra low-power low-noise amplifier designs for 2.4 GHz ISM band applications | |
| Chaghaei et al. | Low-power inductorless current-reuse LNAs with active and passive Gm-enhancement | |
| Wagner et al. | A 31-tap reconfigurable analog FIR filter using heterogeneously integrated polystrata delay-lines | |
| Ramzan et al. | Multiband RF-sampling receiver front-end with on-chip testability in 0.13 μm CMOS | |
| Badiyari et al. | An N-path band-pass filter with parametric gain-boosting | |
| Rena et al. | A process scalable architecture for low noise figure sub-sampling mixer-first RF front-end | |
| Sakian et al. | A 60-GHz double-balanced homodyne down-converter in 65-nm CMOS process |