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DeSalvo, 2006 - Google Patents

Silicon Carbide Static Induction Transistors

DeSalvo, 2006

Document ID
7082725632743479203
Author
DeSalvo G
Publication year
Publication venue
SELECTED TOPICS IN ELECTRONICS AND SYSTEMS

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The static induction transistor (SIT) is a three terminal, vertical current flow, semiconductor device that most closely resembles the solid state version of the triode vacuum tube. M The SIT is also a voltage controlled, majority carrier device, and so it is one version of a field …
Continue reading at www.worldscientific.com (other versions)

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    • H01L29/66Types of semiconductor device; Multistep manufacturing processes therefor
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    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
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    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/778Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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