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Prasad et al., 2013 - Google Patents

Design and fabrication of Si-diaphragm, ZnO piezoelectric film-based MEMS acoustic sensor using SOI wafers

Prasad et al., 2013

Document ID
7219414412643406259
Author
Prasad M
Sahula V
Khanna V
Publication year
Publication venue
IEEE transactions on semiconductor manufacturing

External Links

Snippet

This paper reports a simpler technique for fabricating an microelectromechanical system acoustic sensor based on a piezoelectric zinc oxide (ZnO) thin film, utilizing silicon-on- insulator wafers. A highly c-axis-oriented ZnO film of thickness 2.4 μm, which is covered with …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L41/00Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L41/08Piezo-electric or electrostrictive devices
    • H01L41/09Piezo-electric or electrostrictive devices with electrical input and mechanical output, e.g. actuators, vibrators

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