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de Fresart et al., 2002 - Google Patents

Integration of multi-voltage analog and power devices in a 0.25/spl mu/m CMOS+ flash memory process

de Fresart et al., 2002

Document ID
7229801522816954700
Author
de Fresart E
De Souza R
Morrison J
Parris P
Heddleson J
Venkatesan V
Paulson W
Collins D
Nivison G
Baumert B
Cowden W
Blomberg D
Publication year
Publication venue
Proceedings of the 14th International Symposium on Power Semiconductor Devices and ICs

External Links

Snippet

This paper presents the integration of multivoltage analog and power devices into a 0.25/spl mu/m CMOS+ flash memory process based on Motorola's HiPerMOS/spl trade/platform. A variety of MOSFETs and BJTs with breakdown voltage ranging from 10 V to more than 40 V …
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    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
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