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Lee et al., 2006 - Google Patents

Characterization of silicon–germanium heterojunction bipolar transistors degradation in silicon–germanium BiCMOS technologies

Lee et al., 2006

Document ID
7384752687676644923
Author
Lee S
Park C
Publication year
Publication venue
Solid-state electronics

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Snippet

The degradations of SiGe heterojunction bipolar transistors (HBTs) caused by the integration of the HBTs with a CMOS process were investigated. SiGe HBTs were fabricated using two sorts of BiCMOS technology, the HBT-during-CMOS (HDC) process by which …
Continue reading at www.sciencedirect.com (other versions)

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