[go: up one dir, main page]

Spintronics, 2004 - Google Patents

SYMPOSIUM G

Spintronics, 2004

Document ID
7407810594392042481
Author
Spintronics S
Publication year

External Links

Snippet

By careful control of MBE growth conditions and post growth annealing procedures we have produced GaMnAs epilayers which high conductivities and Curie temperature up to 173K. We demonstrate that the improvement in material properties resulting from annealing is due …
Continue reading at www.mrs.org (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L43/00—Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L43/02—Details
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L43/00—Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L43/10—Selection of materials
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L43/00—Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L43/06—Hall-effect devices
    • H01L43/065—Semiconductor Hall-effect devices
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L43/00—Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L43/08—Magnetic-field-controlled resistors

Similar Documents

Publication Publication Date Title
Dietl et al. Dilute ferromagnetic semiconductors: Physics and spintronic structures
Bratkovsky Spintronic effects in metallic, semiconductor, metal–oxide and metal–semiconductor heterostructures
Akinaga et al. Semiconductor spintronics
Wolf et al. Spintronics: a spin-based electronics vision for the future
Jungwirth et al. Spin-dependent phenomena and device concepts explored in (Ga, Mn) As
Awschalom et al. Semiconductor spintronics and quantum computation
Flatte Spintronics
Pearton et al. Spintronics device concepts
Elm et al. Transport properties of hybrids with ferromagnetic MnAs nanoclusters and their potential for new magnetoelectronic devices
Kioseoglou et al. Electrical spin injection from an n-type ferromagnetic semiconductor into a III–V device heterostructure
Kudo et al. Great differences between low-temperature grown Co2FeSi and Co2MnSi films on single-crystalline oxides
Ohno et al. Spin-dependent phenomena in ferromagnetic/nonmagnetic III–V heterostructures
Samarth An introduction to semiconductor spintronics
Dietl et al. Ferromagnetic semiconductor heterostructures for spintronics
Tao et al. Spin-polarized transport in diluted GaMnAs/AlAs/GaMnAs ferromagnetic semiconductor tunnel junctions
Sanchez et al. Spin-polarized transport in II–VI magnetic resonant-tunneling devices
Spintronics SYMPOSIUM G
Ohno Ferromagnetic III–V semiconductors and their heterostructures
Lesne Non-Equilibrium Spin Accumulation Phenomena at the LaAlO3/SrTiO3 (001) Quasi-Two-Dimensional Electron System
Kusrayev Spin phenomena in semiconductors: physics and applications
Ziese Spin transport in semiconductors
Edmonds Ferromagnetic nanodevices based on (Ga, Mn) As
Timm Magnetic Semiconductors: III–V Semiconductors
Younes Étude Ab initio et Monte Carlo des propriétés magnétiques et électroniques des DMSs dopés avec les Métaux de Transition: GaN et GaAs
Hettiaratchy The Structural and Magnetic Characterization of Molecular Beam Epitaxy Grown µ-Fe 2 O 3/β-Ga 2 O 3 Heterostructures