[go: up one dir, main page]

Istratov et al., 2000 - Google Patents

Iron contamination in silicon technology

Istratov et al., 2000

Document ID
7513596206454726612
Author
Istratov A
Hieslmair H
Weber E
Publication year
Publication venue
Applied Physics A

External Links

Snippet

This article continues the review of fundamental physical properties of iron and its complexes in silicon (Appl. Phys. A 69, 13 (1999)), and is focused on ongoing applied research of iron in silicon technology. The first section of this article presents an analysis of …
Continue reading at link.springer.com (other versions)

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/115Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00

Similar Documents

Publication Publication Date Title
Istratov et al. Iron contamination in silicon technology
Pearton et al. Hydrogen Incorporation in Crystalline Semiconductors
Collett et al. An enhanced alneal process to produce SRV< 1 cm/s in 1 Ω cm n-type Si
Joly Metallic contamination assessment of silicon wafers
Anttila et al. Metal contamination removal on silicon wafers using dilute acidic solutions
Jastrzebski et al. Monitoring of heavy metal contamination during chemical cleaning with surface photovoltage
Mori et al. A Standard Sample Preparation Method for the Determination of Metal Impurities on a Silicon Wafer by Total Reflection X-Ray Fluorescence Spectrometryt
JPH10223713A (en) Heat treatment evaluating wafer and heat treatment evaluating method using the same
Shimizu et al. Effects of chemical surface treatments on the generation of ac surface photovoltages in n-type silicon wafers
Henry et al. Electrical studies on plasma and reactive‐ion‐etched silicon
Fabry et al. Diagnostic and monitoring tools of large scale Si-manufacturing: trace-analytical tools and techniques in Si-wafer manufacturing
Polignano et al. Metal contamination monitoring and gettering
Hackl et al. Correlation between DLTS and TRXFA measurements of copper and iron contaminations in FZ and CZ silicon wafers; application to gettering efficiencies
Polignano et al. Comparison of techniques for detecting metal contamination in silicon wafers
Shimizu Atomic bridging and barrier-type AC surface photovoltage measurements on iron-and copper-contaminated silicon surfaces
Treichel et al. Removal of trace metals using a biodegradable complexing agent
Pawlik Assessment of layers
Eichinger Characterization and analysis of detector materials and processes
Rohatgi et al. Characterization and control of silicon surface modification produced by CCl4 reactive ion etching
Lu et al. Evaluation of cleaning efficiency with a radioactive tracer and development of a microwave digestion method for semiconductor processes
Bertagna et al. Copper Contamination Mechanism of Silicon Substrates from HF Solutions
Shimizu et al. Monitoring of ultra-trace contaminants on silicon wafers for ULSI by a novel impurity extraction and AC surface photovoltage methods
Murali et al. A novel technique for in-line monitoring of micro-contamination and process induced damage
Norga et al. Detection of metallic contaminants on silicon by surface sensitive minority carrier lifetime measurements
Wang et al. Characterization and Modeling of Out‐Diffusion of Manganese and Zinc Impurities from Deep Ultraviolet Photoresist