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Khiangte et al., 2018 - Google Patents

Molecular beam epitaxy and defect structure of Ge (111)/epi-Gd2O3 (111)/Si (111) heterostructures

Khiangte et al., 2018

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Document ID
7558280233654643218
Author
Khiangte K
Rathore J
Das S
Pokharia R
Schmidt J
Osten H
Laha A
Mahapatra S
Publication year
Publication venue
Journal of Applied Physics

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Molecular beam epitaxy of Ge (111) thin films on epitaxial-Gd 2 O 3/Si (111) substrates is reported, along with a systematic investigation of the evolution of Ge growth and structural defects in the grown epilayer. While Ge growth begins in the Volmer-Weber growth mode …
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