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Kemp et al., 2001 - Google Patents

Gigahertz repetition-rate from directly diode-pumped femtosecond Cr: LiSAF laser

Kemp et al., 2001

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Document ID
7552366751580763754
Author
Kemp A
Stormont B
Agate B
Brown C
Keller U
Sibbett W
Publication year
Publication venue
Electronics Letters

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Snippet

Gigahertz repetition-rate, fundamental modelocking of a directly diode-pumped femtosecond laser is demonstrated for the first time. Transform-limited pulses of 146 fs duration are produced from a compact Cr: LiSAF laser incorporating a semiconductor saturable absorber …
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    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Pulse generation, e.g. Q-switching, mode locking
    • H01S3/1106—Mode locking
    • H01S3/1112—Passive mode locking
    • H01S3/1115—Passive mode locking using a saturable absorber
    • H01S3/1118—Solid state absorber, e.g. SESAM
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    • H01S3/1063—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling a device placed within the cavity using a solid state device provided with at least one potential jump barrier
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    • H01S3/16—Solid materials
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    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
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    • H01S3/11—Pulse generation, e.g. Q-switching, mode locking
    • H01S3/113—Q-switching using bleachable or solarising media
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    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling a device placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling a device placed within the cavity using a non-linear optical device, e.g. exhibiting Brillouin- or Raman-scattering
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    • H01S3/05—Construction or shape of optical resonators; Accomodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
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    • H01S3/06—Construction or shape of active medium
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    • H01S3/08—Construction or shape of optical resonators or components thereof
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