[go: up one dir, main page]

Jakopovic et al., 1993 - Google Patents

A correction of measured power MOSFET's normalized temperature response because of a case temperature rise

Jakopovic et al., 1993

Document ID
768181494563840899
Author
Jakopovic Z
Bencic Z
Zunac R
Publication year
Publication venue
1993 Fifth European Conference on Power Electronics and Applications

External Links

Snippet

A method of power MOSFET's normalized temperature response (transient thermal impedance) measurement and correction is presented. During the normalized temperature response measurement it is practically impossible to maintain the constant case temperature …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2832—Specific tests of electronic circuits not provided for elsewhere
    • G01R31/2836—Fault-finding or characterising
    • G01R31/2839—Fault-finding or characterising using signal generators, power supplies or circuit analysers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/30—Marginal testing, e.g. varying supply voltage
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317—Testing of digital circuits
    • G01R31/3181—Functional testing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply, e.g. by thermoelectric elements
    • G01K7/42—Circuits for reducing thermal inertia; Circuits for predicting the stationary value of temperature
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N25/00—Investigating or analyzing materials by the use of thermal means
    • G01N25/18—Investigating or analyzing materials by the use of thermal means by investigating thermal conductivity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N25/00—Investigating or analyzing materials by the use of thermal means
    • G01N25/20—Investigating or analyzing materials by the use of thermal means by investigating the development of heat, i.e. calorimetry, e.g. by measuring specific heat, by measuring thermal conductivity
    • G01N25/48—Investigating or analyzing materials by the use of thermal means by investigating the development of heat, i.e. calorimetry, e.g. by measuring specific heat, by measuring thermal conductivity on solution, sorption, or a chemical reaction not involving combustion or catalytic oxidation
    • G01N25/4846—Investigating or analyzing materials by the use of thermal means by investigating the development of heat, i.e. calorimetry, e.g. by measuring specific heat, by measuring thermal conductivity on solution, sorption, or a chemical reaction not involving combustion or catalytic oxidation for a motionless, e.g. solid sample
    • G01N25/4866—Investigating or analyzing materials by the use of thermal means by investigating the development of heat, i.e. calorimetry, e.g. by measuring specific heat, by measuring thermal conductivity on solution, sorption, or a chemical reaction not involving combustion or catalytic oxidation for a motionless, e.g. solid sample by using a differential method
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R21/00—Arrangements for measuring electric power or power factor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K3/00—Thermometers giving results other than momentary value of temperature
    • G01K3/08—Thermometers giving results other than momentary value of temperature giving differences of values; giving differentiated values

Similar Documents

Publication Publication Date Title
Sofia Analysis of thermal transient data with synthesized dynamic models for semiconductor devices
Blackburn et al. Power MOSFET temperature measurements
Smirnov et al. Modulation method for measuring thermal impedance components of semiconductor devices
Avenas et al. Evaluation of IGBT thermo-sensitive electrical parameters under different dissipation conditions–Comparison with infrared measurements
Shammas et al. A simple method for evaluating the transient thermal response of semiconductor devices
Davidson et al. Measurement and characterization technique for real-time die temperature prediction of MOSFET-based power electronics
Lefebvre et al. Discrete power semiconductor losses versus junction temperature estimation based on thermal impedance curves
Weimer et al. Accuracy study of calorimetric switching loss energy measurements for wide bandgap power transistors
RU2685769C1 (en) Method of determination of transient thermal resistance of crystal-housing and thermal resistance of crystal-housing in the state of heat equilibrium of transistors with field control
Ghimire Real time monitoring and wear out of power modules
CN109211963A (en) System and method for detecting thermal resistance of heat-conducting material
Christiaens et al. Transient thermal modeling and characterization of a hybrid component
US20240288319A1 (en) Method of measuring the junction temperature of a semiconductor device
Parker et al. Pulse measurements quantify dispersion in PHEMTs
Polom et al. Experimentally extracting multiple spatial thermal models that accurately capture slow and fast properties of assembled power semiconductor converter systems
Kalker et al. Online junction-temperature extraction method for SiC MOSFETs utilizing turn-on delay
Chen et al. Evaluation of thermal performance of packaged GaN HEMT cascode power switch by transient thermal testing
Polom et al. Power device interface characterization with low-cost thermal system identification
Jakopovic et al. A correction of measured power MOSFET's normalized temperature response because of a case temperature rise
Farkas et al. Thermal transient testing
Ceccarelli et al. Evaluating IGBT temperature evolution during short circuit operations using a TSEP-based method
Ma et al. Fast thermal resistance measurement of high brightness LED
Jakopovic Computer controlled measurement of power MOSFET transient thermal response
Abbaszada et al. Assessing the reliability of SiC MOSFET through inverter-like accelerated test vs. power cycling test
Leung et al. Accelerated Power Cycling of GaN HEMTs using Switching Loss and Fast Temperature Measurement