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Joe et al., 2005 - Google Patents

High-performance InGaP/GaAs HBTs with compositionally graded bases grown by solid-source MBE

Joe et al., 2005

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Document ID
7732546647692537811
Author
Joe J
Missous M
Publication year
Publication venue
IEEE Transactions on Electron Devices

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Npn InGaP/GaAs heterojunction bipolar transistors (HBTs) with compositionally graded In/sub x/Ga/sub 1-x/As (Be doped) bases have been successfully grown by solid-source molecular beam Epitaxy (SSMBE) using a gallium phosphide (GaP) decomposition source …
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