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Zhang et al., 2008 - Google Patents

High-performance 4H-SiC based metal-semiconductor-metal ultraviolet photodetectors with Al2O3∕ SiO2 films

Zhang et al., 2008

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Document ID
802969650258202684
Author
Zhang F
Yang W
Huang H
Chen X
Wu Z
Zhu H
Qi H
Yao J
Fan Z
Shao J
Publication year
Publication venue
Applied Physics Letters

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4H-silicon carbide (SiC) metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors with Al 2 O 3∕ Si O 2 (A/S) films employed as antireflection/passivation layers have been demonstrated. The devices showed a peak responsivity of 0.12 A∕ W at 290 nm and …
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    • H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
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    • H01L31/101—Devices sensitive to infra-red, visible or ultra-violet radiation
    • H01L31/102—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier
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    • H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
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