[go: up one dir, main page]

Lee et al., 2009 - Google Patents

Programmable digital memory characteristics of nanoscale thin films of a fully conjugated polymer

Lee et al., 2009

Document ID
805401648384226553
Author
Lee T
Park S
Hahm S
Kim D
Kim K
Kim J
Kwon W
Kim Y
Chang T
Ree M
Publication year
Publication venue
The Journal of Physical Chemistry C

External Links

Snippet

This paper reports for the first time the programmable digital memory characteristics of the nanoscale thin films of a fully π-conjugated polymer, poly (diethyl dipropargylmalonate)( pDEDPM) in the absence of doping. This π-conjugated polymer was found to exhibit good …
Continue reading at pubs.acs.org (other versions)

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/05Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture
    • H01L51/0575Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L51/0595Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices molecular electronic devices
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/05Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture
    • H01L51/0504Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
    • H01L51/0508Field-effect devices, e.g. TFTs
    • H01L51/0512Field-effect devices, e.g. TFTs insulated gate field effect transistors
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C13/00Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
    • G11C13/0002Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00 using resistance random access memory [RRAM] elements
    • G11C13/0009RRAM elements whose operation depends upon chemical change
    • G11C13/0014RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
    • H01L51/0034Organic polymers or oligomers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
    • H01L51/0045Carbon containing materials, e.g. carbon nanotubes, fullerenes
    • H01L51/0048Carbon nanotubes
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/42Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for sensing infra-red radiation, light, electro-magnetic radiation of shorter wavelength or corpuscular radiation and adapted for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation using organic materials as the active part, or using a combination of organic materials with other material as the active part; Multistep processes for their manufacture
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L45/00Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L45/04Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
    • H01L45/14Selection of switching materials
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/12Organic substances

Similar Documents

Publication Publication Date Title
Lee et al. Programmable digital memory characteristics of nanoscale thin films of a fully conjugated polymer
Hu et al. A multilevel memory based on proton-doped polyazomethine with an excellent uniformity in resistive switching
Yonekuta et al. Battery-inspired, nonvolatile, and rewritable memory architecture: a radical polymer-based organic device
Wang et al. Resistive switching induced by metallic filaments formation through poly (3, 4-ethylene-dioxythiophene): poly (styrenesulfonate)
Ling et al. Synthesis and dynamic random access memory behavior of a functional polyimide
Lee et al. Direct observation of a carbon filament in water-resistant organic memory
Li et al. A small-molecule-based ternary data-storage device
Bandhopadhyay et al. Large conductance switching and binary operation in organic devices: Role of functional groups
Joo et al. Metal filament growth in electrically conductive polymers for nonvolatile memory application
Fang et al. Synthesis, Morphology, and Properties of Poly (3‐hexylthiophene)‐block‐Poly (vinylphenyl oxadiazole) Donor–Acceptor Rod–Coil Block Copolymers and Their Memory Device Applications
Tseng et al. Polyaniline nanofiber/gold nanoparticle nonvolatile memory
Miller et al. Electrically conducting dendrimers
Kim et al. Programmable permanent data storage characteristics of nanoscale thin films of a thermally stable aromatic polyimide
Liu et al. New dibenzothiophene-containing donor− acceptor polyimides for high-performance memory device applications
Lim et al. Conductivity switching and electronic memory effect in polymers with pendant azobenzene chromophores
Barman et al. Conducting polymer memory devices based on dynamic doping
Kim et al. Nonvolatile unipolar and bipolar bistable memory characteristics of a high temperature polyimide bearing diphenylaminobenzylidenylimine moieties
Das et al. Redox-gated three-terminal organic memory devices: effect of composition and environment on performance
Yu et al. Tunable electrical memory characteristics using polyimide: Polycyclic aromatic compound blends on flexible substrates
Zhang et al. Thermally stable ternary data-storage device based on twisted anthraquinone molecular design
Narasimhan Arunagirinathan et al. Solution processed donor–acceptor polymer based electrical memory device with high on/off ratio and tunable properties
Zhou et al. Ultra-flexible nonvolatile memory based on donor-acceptor diketopyrrolopyrrole polymer blends
Hahm et al. Electrical memory characteristics of nitrogen-linked poly (2, 7-carbazole) s
Koo et al. Control over memory performance of layer-by-layer assembled metal phthalocyanine multilayers via molecular-level manipulation
Zhuang et al. Dual-mechanism-controlled ternary memory devices fabricated by random copolymers with pendent carbazole and nitro-azobenzene