Xu et al., 2004 - Google Patents
Progress in material removal mechanisms of surface polishing with ultra precisionXu et al., 2004
- Document ID
- 8087699481997788027
- Author
- Xu J
- Luo J
- Lu X
- Zhang C
- Pan G
- Publication year
- Publication venue
- Chinese Science Bulletin
External Links
Snippet
Chemical mechanical polishing (CMP) process is commonly regarded as the best method for achieving global planarization in the field of surface finishing with ultra-precision. The development of investigation on material removal mechanisms for different materials used in …
- 239000000463 material 0 title abstract description 56
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; MISCELLANEOUS COMPOSITIONS; MISCELLANEOUS APPLICATIONS OF MATERIALS
- C09G—POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; MISCELLANEOUS COMPOSITIONS; MISCELLANEOUS APPLICATIONS OF MATERIALS
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Xu et al. | Progress in material removal mechanisms of surface polishing with ultra precision | |
| Liang et al. | Wear phenomena in chemical mechanical polishing | |
| Fu et al. | A plasticity-based model of material removal in chemical-mechanical polishing (CMP) | |
| Venkatesh et al. | Observations on polishing and ultraprecision machining of semiconductor substrate materials | |
| Zhong | Recent advances in polishing of advanced materials | |
| Luo et al. | Material removal regions in chemical mechanical planarization for submicron integrated circuit fabrication: coupling effects of slurry chemicals, abrasive size distribution, and wafer-pad contact area | |
| Zhang et al. | The role of particle adhesion and surface deformation in chemical mechanical polishing processes | |
| Shi et al. | Surface removal of a copper thin film in an ultrathin water environment by a molecular dynamics study | |
| Zhang et al. | Two-step chemical mechanical polishing of sapphire substrate | |
| WO2002009907A1 (en) | Method of chemical mechanical polishing | |
| Armini et al. | Composite polymer-core silica-shell abrasive particles during oxide CMP: a defectivity study | |
| Doi et al. | Advances in CMP polishing technologies | |
| Moon | Mechanical aspects of the material removal mechanism in chemical mechanical polishing (CMP) | |
| Tao et al. | Effects of grinding-induced surface topography on the material removal mechanism of silicon chemical mechanical polishing | |
| Wu et al. | Two material removal modes in chemical mechanical polishing: mechanical plowing vs. chemical bonding | |
| Sung et al. | First observation on the feasibility of scratch formation by pad–particle mixture in CMP process | |
| Kenchappa et al. | Soft chemical mechanical polishing pad for oxide CMP applications | |
| Muratov et al. | Tribochemical polishing | |
| Kasai et al. | Physics and tribology of chemical mechanical planarization | |
| Lai | Mechanics, mechanisms, and modeling of the chemical mechanical polishing process | |
| Jiang et al. | A chemical mechanical polishing model based on the viscous flow of the amorphous layer | |
| Wang et al. | Effect of abrasive particle size distribution on removal rate of silicon wafers | |
| Chen et al. | Soft abrasive facilitating materials removal of SiO2/Si bilayer materials: a molecular dynamics study | |
| Wang et al. | Surface action mechanism and design considerations for the mechanical integrity of Cu/Low K BEOL interconnect during chemical mechanical polishing process | |
| Armini et al. | Composite polymer core–silica shell abrasives: the effect of the shape of the silica particles on oxide CMP |