Cordes et al., 2011 - Google Patents
Sidewall slope sensitivity of CD-AFMCordes et al., 2011
- Document ID
- 841771040119002092
- Author
- Cordes A
- Bunday B
- Cottrell E
- Publication year
- Publication venue
- Instrumentation, Metrology, and Standards for Nanomanufacturing, Optics, and Semiconductors V
External Links
Snippet
In this paper, we explore the sensitivity of three-dimensional atomic force microscopy to incremental variation in the sidewall angle of near-vertical features. Measurement results are presented from a specially constructed wafer with continuous variation in sidewall slope …
- 230000035945 sensitivity 0 title abstract description 7
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical means
- G01B11/24—Measuring arrangements characterised by the use of optical means for measuring contours or curvatures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Bencher et al. | Directed self-assembly defectivity assessment. Part II | |
| Dai et al. | Development and characterisation of a new line width reference material | |
| US20090263024A1 (en) | Apparatus for data analysis | |
| JP2004264039A (en) | Scanning probe microscope, CD / cross section profile measurement method, and semiconductor device manufacturing method | |
| US20210063319A1 (en) | Method for semiconductor wafer inspection and system thereof | |
| Volk et al. | Linear standard for SEM–AFM microelectronics dimensional metrology in the range 0.01–100 μm | |
| Foucher et al. | Introduction of next-generation 3D AFM for advanced process control | |
| Cordes et al. | Sidewall slope sensitivity of CD-AFM | |
| Cordes et al. | Sidewall slope sensitivity of critical dimension atomic force microscopy | |
| US11852581B2 (en) | Method for calibrating nano measurement scale and standard material used therein | |
| Orji et al. | Strategies for nanoscale contour metrology using critical dimension atomic force microscopy | |
| Dixson et al. | Toward traceability for at-line AFM dimensional metrology | |
| Orji et al. | 3D-AFM measurements for semiconductor structures and devices | |
| Rana et al. | Hybrid reference metrology exploiting patterning simulation | |
| Kizu et al. | Evaluation of the change in photoresist sidewall roughness due to electron beam-induced shrinkage using atomic force microscopy | |
| CN101727013A (en) | Method for on-line monitoring of photoetching conditions | |
| US7966142B2 (en) | Multi-variable regression for metrology | |
| Guarini et al. | Sub-0.35-um critical dimension metrology using atomic force microscopy | |
| JP2010087075A (en) | Mask inspection method | |
| US7230241B2 (en) | Method for matching two measurement methods for measuring structure widths on a substrate | |
| US20250052703A1 (en) | Method for evaluating the bending stiffness of high aspect ratio nanosized structures | |
| Allgair et al. | Toward a unified advanced CD-SEM specification for sub-0.18-um technology | |
| JP5402458B2 (en) | Fine pattern measuring method and fine pattern measuring apparatus | |
| Orji et al. | AFM characterization of semiconductor line edge roughness | |
| RU2325619C2 (en) | Test object for calibration of raster electron and scanning probe microscopes |