Ritchie et al., 1989 - Google Patents
Interference filters using indium phosphide‐based epitaxial layers grown by metalorganic vapor phase epitaxyRitchie et al., 1989
View PDF- Document ID
- 8609800959532802888
- Author
- Ritchie S
- Spurdens P
- Hewett N
- Aylett M
- Publication year
- Publication venue
- Applied Physics Letters
External Links
Snippet
Bandpass interference filters with center wavelengths between 1.3 and 1.7 μm have been made with InGaAsP/InP epitaxial layers grown by metalorganic vapor phase epitaxy. The transmission spectra measured exhibit a full width half maximum of 7 nm with peak …
- 238000000927 vapour-phase epitaxy 0 title abstract description 5
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
- G02B6/00—Light guides
- G02B6/10—Light guides of the optical waveguide type
- G02B6/12—Light guides of the optical waveguide type of the integrated circuit kind
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
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