Sharma et al., 2016 - Google Patents
Studies on structural, optical, magnetic, and resistive switching properties of doped BiFe1-xCrxO3 thin filmsSharma et al., 2016
View HTML- Document ID
- 87273738551518599
- Author
- Sharma Y
- Martinez R
- Agarwal R
- Barrionuevo D
- Katiyar R
- Kumar A
- Katiyar R
- Publication year
- Publication venue
- Journal of Applied Physics
External Links
Snippet
We report the effect of multivalent Cr-ion doping on the structural, optical, magnetic, and resistive switching properties of BiFe 1-x Cr x O 3 (BFCO) thin films (where, 0≤ x≤ 0.15). BFCO thin films were deposited on Pt/TiO 2/SiO 2/Si (100) substrate using pulsed laser …
- 239000010409 thin film 0 title abstract description 22
Classifications
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L45/00—Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
- H01L45/04—Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
- H01L45/14—Selection of switching materials
- H01L45/145—Oxides or nitrides
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L45/00—Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
- H01L45/04—Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
- H01L45/12—Details
- H01L45/122—Device geometry
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L45/00—Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
- H01L45/04—Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
- H01L45/16—Manufacturing
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L43/00—Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
- H01L43/10—Selection of materials
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