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Raman et al., 2025 - Google Patents

Performance Enhancement of Normally-OFF AlGaN/GaN HEMT using Delta-doped GaN cap Layer

Raman et al., 2025

Document ID
9207367678926997971
Author
Raman A
Krishna K
Ranjan R
Singh S
Publication year
Publication venue
Semiconductors

External Links

Snippet

In this paper, a normally-OFF delta (δ)-doped aluminium gallium nitride (AlGaN)/Gallium nitride (GaN) high electron mobility transistor (HEMT) for high power applications is designed and simulated in Silvaco TCAD. Normally-OFF operation is achieved by using p …
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