Nada et al., 2014 - Google Patents
Design and performance of high-speed avalanche photodiodes for 100-Gb/s systems and beyondNada et al., 2014
- Document ID
- 9364179396544128797
- Author
- Nada M
- Yoshimatsu T
- Muramoto Y
- Yokoyama H
- Matsuzaki H
- Publication year
- Publication venue
- Journal of Lightwave Technology
External Links
Snippet
This paper reviews our work on high-speed avalanche photodiodes (APDs) with a unique vertical-illumination structure, targeting 100-Gb/s systems and beyond. The APDs feature easy lateral and vertical scaling for achieving the required operation speed and responsivity …
- 238000013461 design 0 title description 7
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infra-red, visible or ultra-violet radiation
- H01L31/102—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier
- H01L31/105—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/60—Receivers
- H04B10/66—Non-coherent receivers, e.g. using direct detection
- H04B10/69—Electrical arrangements in the receiver
-
- G—PHYSICS
- G02—OPTICS
- G02F—DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/25—Arrangements specific to fibre transmission
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
- G02B6/00—Light guides
- G02B6/10—Light guides of the optical waveguide type
- G02B6/12—Light guides of the optical waveguide type of the integrated circuit kind
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
- G02B6/00—Light guides
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Nada et al. | Design and performance of high-speed avalanche photodiodes for 100-Gb/s systems and beyond | |
| Wang et al. | High-speed Si-Ge avalanche photodiodes | |
| Nada et al. | Responsivity-bandwidth limit of avalanche photodiodes: toward future ethernet systems | |
| Huang et al. | 25 Gbps low-voltage waveguide Si–Ge avalanche photodiode | |
| Nada et al. | A 42-GHz bandwidth avalanche photodiodes based on III-V compounds for 106-Gbit/s PAM4 applications | |
| Yuan et al. | High responsivity Si-Ge waveguide avalanche photodiodes enhanced by loop reflector | |
| Wang et al. | Silicon photonic transceivers for application in data centers | |
| Runge et al. | Waveguide integrated balanced photodetectors for coherent receivers | |
| Yagi et al. | InP-based monolithically integrated photonic devices for digital coherent transmission | |
| Achouche et al. | High performance evanescent edge coupled waveguide unitraveling-carrier photodiodes for> 40-Gb/s optical receivers | |
| Nakajima et al. | High-speed avalanche photodiode and high-sensitivity receiver optical subassembly for 100-Gb/s ethernet | |
| Sato et al. | Photonic crystal lasers for chip-to-chip and on-chip optical interconnects | |
| Kim et al. | Single-chip photonic transceiver based on bulk-silicon, as a chip-level photonic I/O platform for optical interconnects | |
| Xie et al. | InGaAs/InAlAs avalanche photodiode with low dark current for high-speed operation | |
| Ghandiparsi et al. | High-speed high-efficiency photon-trapping broadband silicon PIN photodiodes for short-reach optical interconnects in data centers | |
| Liang et al. | Integrated green DWDM photonics for next-gen high-performance computing | |
| Yuan et al. | Mechanisms of enhanced sub-bandgap absorption in high-speed all-silicon avalanche photodiodes | |
| Ohyama et al. | Compact hybrid integrated 100-Gb/s transmitter optical sub-assembly using optical butt-coupling between EADFB lasers and silica-based AWG multiplexer | |
| Shindo et al. | High modulated output power over 9.0 dBm with 1570-nm wavelength SOA assisted extended reach EADFB laser (AXEL) | |
| Okimoto et al. | InP-based butt-joint coupled waveguide photodiodes integrated with various functions for 100 GBaud coherent detection | |
| Kanazawa et al. | High output power SOA assisted extended reach EADFB laser (AXEL) TOSA for 400-Gbit/s 40-km fiber-amplifier-less transmission | |
| US20130077980A1 (en) | Optical receiver | |
| Baumgartner et al. | Novel CMOS-compatible ultralow capacitance hybrid III-V/Si photodetectors tested up to 32 Gbps NRZ | |
| Beckerwerth et al. | High-speed photodiodes for power efficient data transmission | |
| Takahashi et al. | High-power 25-Gb/s electroabsorption modulator integrated with a laser diode |