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Lee et al., 2000 - Google Patents

Ohmic Contact Formation Mechanism of Pd Nonalloyed Contacts on p‐Type GaN

Lee et al., 2000

Document ID
9535126511429927447
Author
Lee J
Kim J
Publication year
Publication venue
Journal of The Electrochemical Society

External Links

Snippet

In the realization of optical devices1-3 using GaN, such as blue light emitting diodes and laser diodes (LDs), low resistance ohmic contacts to both n-type GaN and p-type GaN is essential. For n-type GaN, ohmic contacts with low resistivities (< 10 5 cm2) have been …
Continue reading at iopscience.iop.org (other versions)

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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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