Goletti et al., 2022 - Google Patents
Reflectance anisotropy spectroscopy of strain-engineered GaAsBi alloysGoletti et al., 2022
View HTML- Document ID
- 9556322444903008030
- Author
- Goletti C
- Fazi L
- Tisbi E
- Bonanni B
- Placidi E
- Arciprete F
- Publication year
- Publication venue
- Applied Physics Letters
External Links
Snippet
In this paper, we present results obtained by an optical technique, namely, reflectance anisotropy spectroscopy (RAS), applied to a series of GaAs 1− x Bi x samples grown by molecular beam epitaxy (MBE) under different strain conditions with the increasing …
- 238000004611 spectroscopical analysis 0 title abstract description 9
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Kandaswamy et al. | GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance | |
| Lin et al. | Investigation of the direct band gaps in Ge1− xSnx alloys with strain control by photoreflectance spectroscopy | |
| Döscher et al. | In situ verification of single-domain III-V on Si (100) growth via metal-organic vapor phase epitaxy | |
| Döscher et al. | In situ reflection anisotropy spectroscopy analysis of heteroepitaxial GaP films grown on Si (100) | |
| Jones et al. | Band gap bowing parameter of In1− xAlxN | |
| Saha et al. | Electronic and optical properties of ScN and (Sc, Mn) N thin films deposited by reactive DC-magnetron sputtering | |
| Goletti et al. | Reflectance anisotropy spectroscopy of strain-engineered GaAsBi alloys | |
| Schöche et al. | Electron effective mass in Al0. 72Ga0. 28N alloys determined by mid-infrared optical Hall effect | |
| Ougazzaden et al. | Bandgap bowing in BGaN thin films | |
| Dybała et al. | Electromodulation spectroscopy of direct optical transitions in Ge1− xSnx layers under hydrostatic pressure and built-in strain | |
| Steele et al. | Raman scattering studies of strain effects in (100) and (311) B GaAs1− xBix epitaxial layers | |
| Bollani et al. | Local uniaxial tensile strain in germanium of up to 4% induced by SiGe epitaxial nanostructures | |
| Gallacher et al. | Mid-infrared intersubband absorption from p-Ge quantum wells grown on Si substrates | |
| Begum et al. | Structural characterization of GaAs and InAs nanowires by means of Raman spectroscopy | |
| St-Jean et al. | Band gap of sphalerite and chalcopyrite phases of epitaxial ZnSnP2 | |
| Johnson et al. | Effect of gallium nitride template layer strain on the growth of InxGa1-xN∕ GaN multiple quantum well light emitting diodes | |
| Ma et al. | Strain-compensation measurement and simulation of InGaAs/GaAsP multiple quantum wells by metal organic vapor phase epitaxy using wafer-curvature | |
| Paulauskas et al. | Polarization dependent photoluminescence and optical anisotropy in CuPtB-ordered dilute GaAs1–xBix alloys | |
| Weng et al. | Effects of buffer layers on the structural and electronic properties of InSb films | |
| Bottegoni et al. | Ge/SiGe heterostructures as emitters of polarized electrons | |
| France et al. | In situ measurement of CuPt alloy ordering using strain anisotropy | |
| Hosseini Vajargah et al. | Atomic-resolution study of polarity reversal in GaSb grown on Si by scanning transmission electron microscopy | |
| Yu et al. | Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells | |
| Migliorato et al. | Influence of composition on the piezoelectric effect and on the conduction band energy levels of InxGa1− xAs∕ GaAs quantum dots | |
| Son et al. | Kinetically controlled thin-film growth of layered β-and γ-NaxCoO2 cobaltate |