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Malachowski et al., 1998 - Google Patents

Comparison of GaN Schottky barrier and pn junction photodiodes

Malachowski et al., 1998

Document ID
9684064019909326764
Author
Malachowski M
Rogalski A
Publication year
Publication venue
Photodetectors: Materials and Devices III

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Snippet

At present, the main efforts in fabrication of UV photodetectors are directed to GaN Schottky barriers and pn junction photodiodes. The future development of UV photodetectors will be dominated by complex band gap heterostructures using 3D gap and doping engineering …
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